Tystar TEOS Deposition
Tystar TEOS Deposition
Tystar
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Thin Film Processing
- Dielectric
- CVD
Description
This LPCVD furnace deposits silicon dioxide using tetraethyl orthosilicate (TEOS), which provides more conformal films than silane-based depositions. This furnace accommodates wafers up to 6" in diameter.
Maximum Substrate Size
6 inch