Thermo LPCVD Nitride
Thermo LPCVD Nitride
Thermco Systems
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Thin Film Processing
- Dielectric
- CVD
Description
Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3). This furnace handles wafers up to 6 inch.
Maximum Substrate Size
6 inch