Thermco LPCVD Poly 1/2

Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at a low pressure (~500 mtorr) using silane (SiH4). The tube has a sloping temperature profile to accommodate depletion of reactants. Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon. This furnace can handle wafers up to 6 inch and is plumbed with GeH4, PH3 and B2H6.