Thermco LPCVD Low Temperature Oxide

Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr) using silane and oxygen. Phosphine in silane can be added to dope the film to create phosphosilicate glass (PSG). The refractive index of the film is influenced by deposition rate (largely temperature dependent) and phosphorous content. The deposition rate is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).