STS PECVD 3

Surface Technology -

SENIC Georgia Tech Institute for Electronics and Nanotechnology Micro/Nano Fabrication Facility

Thin Film Processing
- Dielectric
  - PECVD

Description

STS PECVD 3 is a Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment for deposition of high quality semiconductor and dielectric thin films. Specification: SiO2, Si3N4, a-Si, 4", 6" wafer only. Loadlock with 2 wafer carousal. P+/N- doping gases available. Both low/high frequency RF power available.

Maximum Substrate Size

6 inch

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