STS Deep RIE Etcher
STS Deep RIE Etcher
STS - DRIE
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Etching
- Dry
- Deep Silicon (Bosch)
Description
This is an ICP, deep silicon etcher, using the classic Bosch process. The platform is single-chamber, manual loadlock system. The etch rate is between 2 to 4 microns per minute.
Maximum Substrate Size
4 inch