STS AOE ICP
STS AOE ICP
Surface Technology - Multiplex ICP
SENIC
Georgia Tech
Institute for Electronics and Nanotechnology Micro/Nano Fabrication Facility
- Etching
- Dry
- ICP
Description
The Advanced Oxide Etch (AOE) source is a revolutionary design, based on STS' well-established Inductively Coupled Plasma (ICP) technology. The AEO source is originally conceived to overcome the limitations of conventional high density plasma sources for SiO2 deep etch applications. It is also proven to be suitable for deep etching of quartz, pyrex, and fused silica for 4" substrates and 6" substrates by request. System Components: Reaction chamber, loadlock, throttle valve, pressure guage, MFCs, turbo pump, mechanical pump, chillers. Equipment Identification: Model Number: Multiplex ICP, Serial Number: 19743, GT ID Number: 145831
Maximum Substrate Size
6 inch