Steam Oxidation (Furnace D1)

This furnace is dedicated to steam oxidation of silicon wafers using oxygen and hydrogen to generate the steam during the oxidation. It features a quartz tube which is 62.43 cm long and 212 mm in diameter with a 34 inch constant temperature zone. The temperature uniformity is achieved by a three-zone heating system. The maximum wafer diameter is 6 inches; however, small pieces can be oxidized by placing them on a sample holder. Up to 50 wafers can be processed in a single run. A typical steam oxidation is carried out at 1000C, however, the furnace is capable of operating in a temperature range of 700 to 1050C.