Sputtering System - 3 target

The SP-3 has a turbo-pumped chamber that reaches a vacuum in the 10-7 Torr range with a pump-down time of ~1 hour. Three shuttered magnetron guns each contain 2" diameter targets. Two DC guns for deposition of conductive materials and one RF gun for deposition of conductive or non-conductive materials. Argon flow and chamber pressure control for optimizing deposition conditions. O2 mass flow controlled process gas for reactive sputtering. Heated rotating substrate holder that maintains temperature control up to 800C for manipulation of film crystal structure, and accommodates substrates up to 4" in diameter.

Applications: Sputter deposition of metal, semiconductor, and/or dielectric thin films onto pieces of substrates or whole substrates up to 4" diameter. The SP-3's configuration affords good sidewall coverage of features for insulation/isolation. Depositions can be single thin films or multilayered with up to three different films in one pump-down. Shuttered magnetron guns maintain sharp interfaces between thin films.