SPTS uetch vapor etch

The SPTS uetch vapor system uses anhydrous HF and ethanol at reduced pressure and 45C to etch isotropically sacrificial silicon oxide layers, primarily to release silicon microstructures in MEMS devices. The dry process avoids stiction of released moving parts and damage to delicate structures common issues with conventional wet processing technology. This is a single wafer system for 4 inch to 8 inch wafers and dies on a carrier wafer.