SPTS uEtch HF Vapor Etcher

This HF Vapor Dry Etch system is configured with Hydrofluoric and Ethanol vapor. The HFVapor system etches at reduced pressure and 45C to isotropically etch sacrificial silicon oxide layers without a plasma, primarily to release silicon microstructures in MEMS devices. This is a single wafer system for 4 inch to 8 inch wafers and dies on a carrier wafer.