SPTS Rapier DRIE

The SPTSs Rapier system etches Si using Bosch switched processing for vertical profiles as well as non-switched processing for tapered profiles. The system is equipped with dual plasma sources with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets; which results in high etch rate, good uniformity, and less tilting around wafer edge. The Electro-Static Clamping Chuck enables good wafer clamping, less wafer bowing compared with mechanical clamping, and wafer-less chamber cleaning. The attached AMS chiller can control the chuck temperature from -20C to + 40C and the Claritas end point detector can minimize the micro-trenches of SOI wafer etch as well as control the pre-etch and the post-etch cleaning.