SPTS-DRIE
SPTS-DRIE
SPTS - Rapier
NNI
University of Washington
Washington Nanofabrication Facility (WNF)
- Etching
- Dry
- Deep Silicon (Bosch)
Description
Pulsed etching using SF6 and C4F8 for anisotropic silicon etch. This system has advanced endpoint detection, parameter morphing, and buried etch stop compensation
Restrictions
No exposed metal
Maximum Substrate Size
8 inch