Raith Voyager 50kV/10kV
Raith Voyager 50kV/10kV
Raith - Voyager
nano@stanford
Stanford University
Stanford Nano Shared Facilities
- Lithography
- All Lithography
- EBL
Description
The Raith Voyager lithography system uses a field emission electron source, with a dual 10 keV/50 keV acceleration potential, a 50 Mega-Hertz deflection system and magnetic lenses to define single line patterns in resist as small as 8 nm. The laser-controlled stage is capable of loading <1 cm square compound semiconductor chips, up to 200 mm (8 inch) diameter silicon substrates.
Special capabilities of the Voyager include Fixed/(Orbiting)-Beam-Moving-Stage mode for continuous stitching-error-free writing for centimeter(s) long features. Similarly, the Modulated-Beam-Moving-Stage mode allows periodic structures to be continuously written while avoiding stitching boundaries in a single axis up to 15 centimeters. The Voyager can also function as an SEM inspection tool with both ETD and BSE detectors.
Special capabilities of the Voyager include Fixed/(Orbiting)-Beam-Moving-Stage mode for continuous stitching-error-free writing for centimeter(s) long features. Similarly, the Modulated-Beam-Moving-Stage mode allows periodic structures to be continuously written while avoiding stitching boundaries in a single axis up to 15 centimeters. The Voyager can also function as an SEM inspection tool with both ETD and BSE detectors.
Maximum Substrate Size
8 inch