Plasma Therm Versaline LL ICP Deep Silicon Etcher
Plasma Therm Versaline LL ICP Deep Silicon Etcher
Plasma-Therm - Versaline
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Etching
- Dry
- Deep Silicon (Bosch)
Description
Default config: 4"; Versaline LL-ICP (Inductively Coupled Plasma) etch system configured for Si etches using a process that is similar to the Bosch process.
Maximum Substrate Size
6 inch