Plasma -Therm Diamond RIE

The RIE-11 PT Versaline RIE is an Inductive Coupled Plasma Etching System with a maximum ICP source power of 1,200W and a maximum substrate bias power of 600W. The system is configured to handle 4 wafers and equipped with mechanical clamping and backside helium cooling features. Its substrate temperature can be controlled from 10C to180C. In addition, the temperatures of three other components inside the chamber can also be controlled from room temperature to 180C, including Lid, Ceramic Spool, and Metal Liner. Setting these components at elevated temperatures before processing will reduce by-product coating speed on chamber walls and stabilize chamber conditions for the first couple of runs after the tool was at a stand-by state for a long time.