Oxford Plasma Lab 100
Oxford Plasma Lab 100
Oxford Instruments - Plasmalab System 100
MANTH
University of Pennsylvania
Singh Center for Nanotechnology
- Thin Film Processing
- Dielectric
- PECVD
Description
This is a load locked PECVD system capable of depositing SiO2, Si3N4 and a-Si. Process temperatures range from room temperature through 400C. In addition to standard RF plasma, there is a low frequency source for stress tuning films. The system handles 4/100mm wafers.
Restrictions
No Au in system
Maximum Substrate Size
4 inch