Oxford ICP-PECVD

Oxford Instruments -

SENIC Georgia Tech Institute for Electronics and Nanotechnology Micro/Nano Fabrication Facility

Etching
- Dry
  - ICP

Description

Oxford ICP-PECVD is an Inductively Coupled Plasma (ICP) assisted Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment for deposition of high quality semiconductor and dielectric thin films. The ICP capability enables the high-density (HD) and low temperature dielectric thin film deposition. Specification: SiO2, Si3N4 only. Loadlock with 1 wafer carousal for small piece and up to 4" wafer. Room temperature to 400C dielectric deposition

Maximum Substrate Size

4 inch

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