Oxford End-point RIE
Oxford End-point RIE
Oxford Instruments -
SENIC
Georgia Tech
Institute for Electronics and Nanotechnology Micro/Nano Fabrication Facility
- Etching
- Dry
- RIE
Description
An Oxford Endpoint RIE (Reactive Ion Etcher) system is designed to etch materials such as SiO2 and SiXNY. This RIE system operates at 13.56MHz and has one chamber that is used for etching of dielectric materials. This machine is not available for metal etching. A graphite plate is available to reduce temperature build up during a long process run. Small pieces up to 10" wafers are allowed in this system.
Maximum Substrate Size
10 inch