Molecular Beam Epitaxy, Multi-source
Molecular Beam Epitaxy, Multi-source
NanoEarth
Pacific Northwest National Laboratory
Environmental Molecular Sciences Laboratory (EMSL-PNNL)
- Thin Film Processing
- Dielectric
- MBE
Description
Resembling Sputnik, the ozone- or oxygen-plasma-assisted molecular beam epitaxy system is designed to enable the growth of crystalline metal, alloy, or oxide films of transition metal and select alkaline earth elements with an unprecedented degree of stoichiometric control. The versatile deposition chamber is connected to a surface analytical chamber via an ultra-high vacuum (UHV) transfer line. Integral to the entire system is a combination loadlock and sample preparation chamber for sample introduction and preparatory conditioning.
Multiple samples can be housed under UHV conditions loadlock 3 samples, trolley 10 samples)
Initial IR prep heating of sample in various ambient possible (maximum temperature = 800 C)
Entire sample Ar ion sputter gun for cleaning or Ar-ion etching the entire sample surface.
Molecular beam epitaxy produces exceptionally high quality thin films by precise flux control of very high purity deposition sources and reactant gases in a nearly contamination-free UHV environment. The slow deposition rate, low energy of the source beams, and high source purity reduce or eliminate many of the crystalline defects and impurities which may be present in materials synthesized using other deposition methods. The unique 56 tilt of the deposition chamber in EMSL allows easy acces to the hardware, while preventing cross-contamination of evaporation sources from falling flakes. In-situ monitoring and control of substrate temperature, surface structure, morphology, and metal fluxes provides atomic-level layer control of the thin film deposition process.
The UHV analytical chamber houses a state-of-the-art photoelectron spectrometer, a monochromatic Al K_ x-ray source, a monochromatic ultraviolet light source for He Ia, He I_, or He II photons, and a two-angle (polar and azimuthal) sample goniometer with integral heating and cooling capability to enable angle-dependent photoelectron spectroscopy and band mapping measurements in addition to conventional x-ray photoelectron spectroscopy (XPS). Also integral to the analysis chamber is a low-energy electron diffraction (LEED) system for characterization of the two-dimensional structure of the outermost surface layer and long range periodicity of single crystal surfaces.
VG-Scienta R3000 spectrometer for XPS and ARPES (Lens acceptance angle 15, angular resolved range 10
v XPS energy resolution: 5 meV FWHM from Xe gas, excited with He I light, 0.46 eV FWHM on the Ag 3d5/2 peak using Al Ka x-rays
VG-Scienta VUV-5K UV source is the most intense He-light source with the narrowest line width on the market, providing high intensity spot on the sample even after monochtromatization(~1mm spot size)
SPECS Ion Source IQE 12/38 for cleaning and sputtering of any surface with fine focus or scanning applications
Omicron SPECTALEED delivers sharp and bright LEED patterns with high resolution
Additional ports available for gas-dosing or external source
Integrated heating (_ 800 C) and cooling stage (@ 100 K) on precision manipulator.
Multiple samples can be housed under UHV conditions loadlock 3 samples, trolley 10 samples)
Initial IR prep heating of sample in various ambient possible (maximum temperature = 800 C)
Entire sample Ar ion sputter gun for cleaning or Ar-ion etching the entire sample surface.
Molecular beam epitaxy produces exceptionally high quality thin films by precise flux control of very high purity deposition sources and reactant gases in a nearly contamination-free UHV environment. The slow deposition rate, low energy of the source beams, and high source purity reduce or eliminate many of the crystalline defects and impurities which may be present in materials synthesized using other deposition methods. The unique 56 tilt of the deposition chamber in EMSL allows easy acces to the hardware, while preventing cross-contamination of evaporation sources from falling flakes. In-situ monitoring and control of substrate temperature, surface structure, morphology, and metal fluxes provides atomic-level layer control of the thin film deposition process.
The UHV analytical chamber houses a state-of-the-art photoelectron spectrometer, a monochromatic Al K_ x-ray source, a monochromatic ultraviolet light source for He Ia, He I_, or He II photons, and a two-angle (polar and azimuthal) sample goniometer with integral heating and cooling capability to enable angle-dependent photoelectron spectroscopy and band mapping measurements in addition to conventional x-ray photoelectron spectroscopy (XPS). Also integral to the analysis chamber is a low-energy electron diffraction (LEED) system for characterization of the two-dimensional structure of the outermost surface layer and long range periodicity of single crystal surfaces.
VG-Scienta R3000 spectrometer for XPS and ARPES (Lens acceptance angle 15, angular resolved range 10
v XPS energy resolution: 5 meV FWHM from Xe gas, excited with He I light, 0.46 eV FWHM on the Ag 3d5/2 peak using Al Ka x-rays
VG-Scienta VUV-5K UV source is the most intense He-light source with the narrowest line width on the market, providing high intensity spot on the sample even after monochtromatization(~1mm spot size)
SPECS Ion Source IQE 12/38 for cleaning and sputtering of any surface with fine focus or scanning applications
Omicron SPECTALEED delivers sharp and bright LEED patterns with high resolution
Additional ports available for gas-dosing or external source
Integrated heating (_ 800 C) and cooling stage (@ 100 K) on precision manipulator.