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Matrix Plasma Asher

Matrix Plasma Asher

Matrix - 105

CNS Harvard University Center for Nanoscale Systems (CNS)
  • Etching
    • Dry
      • RIE
Description
The Matrix 105 represents the industry standard in single-wafer photoresist removal and the mainstay of the highly successful plasma descum system for the semiconductor industry.
The system reduces carbon-chain polymer resist in a non damaging environment. Its design incorporates close loop control of vital process parameters, which in turn eliminate device damage that could be both thermal and electrical. The Matrix is a plasma asher (oxygen plasma) using a single 600 watt RF generator. It has a heated chuck capable of 250 deg. C operating temperature. The system is process driven through menu commands and can be programmed for a maximum of 3 step processes plus over etch when using the spectrum endpoint detector. Each step can allow independent control of RF power, oxygen flow, pressure, and up / down movement of the wafer. The pic and place handler is set up to use 6 wafers. Rates
1.2 2.5 u/min on resist
Comments
The system is currently configured as a resist strip asher. By placing a baffle in the chamber, the system can be used as a down stream ozone etcher (descum). In order to use as a down stream etcher a request must be made to the staff to convert the system to this configuration.

Rates
20 1200 nm/min on resist
.08 - .11nm/min on diamond

For issues related to etching processes, please contact Ling Xie; For issues related to equipment, please contact David LaFleur. Ling Xie: 6-9069 lxie@cns.fas.harvard.edu; David LaFleur: 5-5024 dlafleur@cns.fas.harvard.edu
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