LPCVD CMOS Nitride - Bank E-4

The LPCVD CMOS Silicon Nitride furnace is a low pressure CVD furnace with a 40 flat zone capable of processing up to 6 diameter wafers. Process gases used are SiH2Cl2, NH3, and N2O. CVD silicon nitride films with controlled stress and high temperature oxide (HTO) can be deposited. Samples are restricted to silicon based materials only and CMOS specific tool and film limitations.