Karl Suss MA6 Mask Aligner
Karl Suss MA6 Mask Aligner
SUSS MicroTec AG - MA6
SDNI
University of California, San Diego
Nano3 Cleanroom Facility
- Lithography
- All Lithography
- UV
Description
Exposure modes: contact (soft, hard, low vacuum, vacuum) and proximity.
Wavelength range UV400 350-450 nm.
Resolution down to 0.6 um in vacuum contact mode.
Alignment methods: - Top Side Alignment with accuracy down to 0.5 um. - Bottom Side Alignment with accuracy down to 1 um.
Wafer size up to 100 mm, pieces down to < 5 mm x 5 mm. Mask size up to 5 inch x 5 inch, Required mask thickness = 90 mil
Wavelength range UV400 350-450 nm.
Resolution down to 0.6 um in vacuum contact mode.
Alignment methods: - Top Side Alignment with accuracy down to 0.5 um. - Bottom Side Alignment with accuracy down to 1 um.
Wafer size up to 100 mm, pieces down to < 5 mm x 5 mm. Mask size up to 5 inch x 5 inch, Required mask thickness = 90 mil
Maximum Substrate Size
4 inch