FLX-2320-S Thin Film Stress Measurement
FLX-2320-S Thin Film Stress Measurement
Toho - FLX-2320-S
CNS
Harvard University
Center for Nanoscale Systems (CNS)
- Metrology/Characterization
- Thin Film
- Mechanical
Description
The FLX-2320-S determines stress by measuring the curvature change of pre- and post- film deposition. It can measure film stress from -65C to 500C at a heating rate up to 30C/min. Stress variation with temperature is able to be used to characterize film properties, such as moisture concentration, phase changes, thermal expansion, volume changes, and plastic deformations.
Other characteristics of the instrument include:
Dual wave lengths
Calculation of biaxial modules of elasticity, linear expansion
coefficient, stress uniformity and file subtraction
Calculation of water diffusion coefficient
2-D and 3-D view of wafer topography
Wafer size: 75 - 200 mm
Measurement temperature: from -65C to 500C
PC base controller
Speed: 5 sec for 150 mm wafer
Minimum scan step: 0.02 mm
Maximum points per scan: 1250
Other characteristics of the instrument include:
Dual wave lengths
Calculation of biaxial modules of elasticity, linear expansion
coefficient, stress uniformity and file subtraction
Calculation of water diffusion coefficient
2-D and 3-D view of wafer topography
Wafer size: 75 - 200 mm
Measurement temperature: from -65C to 500C
PC base controller
Speed: 5 sec for 150 mm wafer
Minimum scan step: 0.02 mm
Maximum points per scan: 1250