Dry Oxidation (Tylan Furnace D3)

This furnace is dedicated to dry oxidation of silicon wafers using oxygen and hydrogen chloride. It features a quartz tube which is 62.43 cm long and 212 mm in diameter with a 34 inch constant temperature zone.  The temperature uniformity is achieved by a three-zone heating system. The maximum wafer diameter is 6 inches; however, small pieces can be oxidized by placing them on a sample holder.  Up to 50 wafers can be processed in a single run. A typical dry oxidation is carried out at 950C, however, the furnace is capable of operating in a temperature range of 600 to 1000C.