Boron Doping Furnace (BBr3)

This furnace is configured with a temperature controlled bubbler containing with BBr3 as a boron source. Dopant concentration is limited by the solid solubility at the wafer surface. The temperature and time of the pre-dep determines the doping layer depth. A separate drive-in step may be needed to achieve the depth desired. Between the pre-dep and drive-in furnace operations the glass that is formed during pre-dep must be removed by HF wet etching.