Atomic Layer Deposition System (ALD)
Atomic Layer Deposition System (ALD)
Ultratech - Savannah 200
TNF
University of Texas at Austin
Microelectronics Research Center (MRC)
- Thin Film Processing
- Dielectric
- ALD
Description
current available deposition materials: Al2O3, HfO2,...; low- to mid-temperature (100-300 C) deposition system.
Maximum Substrate Size
8 inch