ASML PAS 5500/60 i-line Stepper
ASML PAS 5500/60 i-line Stepper
ASML - PAS 5500/60
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Lithography
- All Lithography
- UV
Description
5:1, i-line reducing stepper with 3-sigma alignment accuracy of 60 nm. Maximum die width = 18 mm; Maximum die height = 22.6 mm (actual maximum die is slightly smaller). Typical resolution to 0.45 microns. Accommodates only 5" reticle masks, 90 to 120 mil thick.
Maximum Substrate Size
8 inch