Applied Materials Centurion Epitaxial System
Applied Materials Centurion Epitaxial System
Applied Materials - Centurion
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Thin Film Processing
- Dielectric
- Other
Description
Epitaxial reactor for reduced pressure epitaxial deposition of silicon, germanium, and SiGe, both doped and undoped. This system is also used for hydrogen anneals and thick polysilicon deposition.
Maximum Substrate Size
4 inch
Comments
Epitaxial deposition. No metals, but doped and undoped Si/SiGe/Ge films.