Aixtron MOCVD - III-V System
Aixtron MOCVD - III-V System
Aixtron - Aixtron 200
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Thin Film Processing
- Dielectric
- Other
Description
Aix200 is a horizontal metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-V-N system with the model of Aixtron 200/4. It is categorized as contaminated tool in general but divided into a "non-gold period" for the first couple of months after each reactor cleaning, and a "gold contaminated period" for extended experiments requirement in the next couple of months. The system can accommodate pieces, one 2-inch wafer, or one 4-inch wafer.
Maximum Substrate Size
4 inch
Comments
MOCVD deposition of doped/undoped GaAs films on silicon