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Aixtron MOCVD - III-V System

Aixtron MOCVD - III-V System

Aixtron - Aixtron 200

nano@stanford Stanford University Stanford Nanofabrication Facility
  • Thin Film Processing
    • Dielectric
      • Other
Description
Aix200 is a horizontal metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-V-N system with the model of Aixtron 200/4. It is categorized as contaminated tool in general but divided into a "non-gold period" for the first couple of months after each reactor cleaning, and a "gold contaminated period" for extended experiments requirement in the next couple of months. The system can accommodate pieces, one 2-inch wafer, or one 4-inch wafer.
Maximum Substrate Size
4 inch
Comments
MOCVD deposition of doped/undoped GaAs films on silicon
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