Aixtron MOCVD - III-N System
Aixtron MOCVD - III-N System
Aixtron - Aixtron CCS
nano@stanford
Stanford University
Stanford Nanofabrication Facility
- Thin Film Processing
- Dielectric
- Other
Description
Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-N system with a vertical closed coupled showerhead reactor, installed with a 1 by 4-inch susceptor and a 3 by 2-inch susceptor. It is categorized as contaminated tool in CMOS standard but is a clean MOCVD so only accepts clean substrates. The system can accommodate one 4-inch wafer, three 2-inch wafers or pieces.
Maximum Substrate Size
4 inch
Comments
MOCVD deposition of GaN films on silicon and sapphire