790 Plasmatherm #1 PECVD
790 Plasmatherm #1 PECVD
PlasmaTherm/Unaxis/Oerlikon - UT 790 Plasmatherm #1
TNF
University of Texas at Austin
Microelectronics Research Center (MRC)
- Thin Film Processing
- Dielectric
- PECVD
Description
SiO2, SiN, aSi deposition. Maximum process temperature 300C; PECVD chamber. CF4-8%O2 to perform in-situ cleaning
Maximum Substrate Size
6 inch